| 发明名称 |
Method of producing a semiconductor device by forming an oxide film on a resin layer |
| 摘要 |
A method of producing a semiconductor device, including: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.
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| 申请公布号 |
US7833882(B2) |
申请公布日期 |
2010.11.16 |
| 申请号 |
US20070651534 |
申请日期 |
2007.01.10 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TSUJI YUKIHIRO;NOMAGUCHI TOSHIO |
| 分类号 |
H01L21/322;H01L21/00;H01L21/28;H01L21/316;H01L21/469;H01L21/60;H01L31/02;H01S5/028 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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