发明名称 |
Simultaneous conditioning of a plurality of memory cells through series resistors |
摘要 |
Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
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申请公布号 |
US7834384(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20080060922 |
申请日期 |
2008.04.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIJARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER, III CHARLES W.;LAM CHUNG H.;MEIJER GERHARD I. |
分类号 |
H01L27/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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