发明名称 Multi-bit STRAM memory cells
摘要 A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.
申请公布号 US7834385(B2) 申请公布日期 2010.11.16
申请号 US20080255184 申请日期 2008.10.21
申请人 SEAGATE TECHNOLOGY LLC 发明人 DIMITROV DIMITAR V.;GAO ZHENG;WANG XIAOBIN
分类号 H01L29/82 主分类号 H01L29/82
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