发明名称 |
Nonvolatile memory using resistance material |
摘要 |
Provided is a nonvolatile memory using a resistance material. In embodiments of the invention, a PRAM is configured to apply a step-down voltage to wordlines during a standby mode. Aspects of the present invention thus provide a nonvolatile memory with reduced standby current. Additionally, embodiments of the invention allow for faster transition from a standby state to an active state.
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申请公布号 |
US7835199(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20080244042 |
申请日期 |
2008.10.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JOON-YONG;CHOI BYUNG-GIL;KIM DU-EUNG |
分类号 |
G11C5/14;G11C8/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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