| 摘要 |
A method for fabricating a semiconductor device, the method includes forming an isolation layer defining an active region over a substrate, forming a conductive layer over the substrate including the isolation layer, patterning the conductive layer to form a conductive pattern over the active region defined on both sides of a gate region, forming insulation spacers on a sidewall of the conductive pattern, forming a conductive layer for a gate electrode and a gate hard mask layer over the resulting structure including the conductive pattern, and patterning the gate hard mask layer and the conductive layer for the gate electrode to form a gate in the gate region of the substrate.
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