发明名称 |
Method for fabricating microstructure and microstructure |
摘要 |
A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1′-T3′) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1′-T3′) to form the thin wall portions.
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申请公布号 |
US7833430(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20050256959 |
申请日期 |
2005.10.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
MI XIAOYU;KOUMA NORINAO;TSUBOI OSAMU;IWAKI MASAFUMI;OKUDA HISAO;SONEDA HIROMITSU;UEDA SATOSHI;SAWAKI IPPEI |
分类号 |
B44C1/22;B81C1/00;G01C19/56;G01P15/08;G02B26/08 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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