发明名称 Light-emitting element having PNPN-structure and light-emitting element array
摘要 A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
申请公布号 US7834363(B2) 申请公布日期 2010.11.16
申请号 US20090394850 申请日期 2009.02.27
申请人 FUJI XEROX CO., LTD. 发明人 OHNO SEIJI
分类号 B41J2/44;H01L27/15;B41J2/45;B41J2/455;H01L29/74;H01L33/00;H01L33/08;H01L33/30;H01L33/40;H03K19/14;H03K19/177 主分类号 B41J2/44
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