发明名称 |
Light-emitting element having PNPN-structure and light-emitting element array |
摘要 |
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
|
申请公布号 |
US7834363(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20090394850 |
申请日期 |
2009.02.27 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
OHNO SEIJI |
分类号 |
B41J2/44;H01L27/15;B41J2/45;B41J2/455;H01L29/74;H01L33/00;H01L33/08;H01L33/30;H01L33/40;H03K19/14;H03K19/177 |
主分类号 |
B41J2/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|