| 摘要 |
A silicon substrate is trimmed in an area at the top and rear surfaces at the center, and a piezoelectric vibrator is disposed therein. As shown in a top view of FIG. 1, the piezoelectric vibrator is supported by a silicon peripheral portion provided on the peripheral portion including the left and right portions of the view having a large thickness, through two beams formed by removing silicon by a known method such as etching. This supported portion corresponds to a node portion. A film structure of the piezoelectric vibrator includes, in thickness directions of the piezoelectric vibrator from the top to the bottom, an Al electrode, a PZT thin film, a Pt underlying electrode, a Ti underlayer, and an SiO2 thin film. Thereby, the piezoelectric vibrator is supported by the beams integrated with the silicon peripheral portion, thus eliminating a mechanical connection and achieving a stable connection.
|
