发明名称 System and method of operation for resistive change memory
摘要 The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes a data storage element which includes a variable resistance and an electrode, and a controller which selects a first mode that stores data by the resistance value of the variable resistance and a second mode that stores data by the amount of electrical charges stored in the electrode. By selectively using the data storage element in the first mode and the second mode, a plurality of storage modes can be implemented with a single data storage element. Thus, miniaturization and cost reduction of the semiconductor device can be achieved.
申请公布号 US7835172(B2) 申请公布日期 2010.11.16
申请号 US20080243836 申请日期 2008.10.01
申请人 SPANSION LLC 发明人 SHINOZAKI NAOHARU
分类号 G11C11/00;G11C11/24 主分类号 G11C11/00
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