发明名称 DATA CONTROL CIRCUIT AND SEMICONBDUCTOR MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A data controlling circuit and a semiconductor memory device using the same are provided to prevent the level change of data in a global line by fixing either of a read-blocking signal or a write-blocking signal to a specific level regardless of the toggling state of a data mask signal. CONSTITUTION: A buffer part(10) generates four internal mask signals(IDQM<1:4>) by buffering four external mask signals(DQM<1:4>). A read-blocking signal generating part(12) generates a read-blocking signal in order to control the transmission of a reading data. A write-blocking signal generating part(14) generates a write-blocking signal in order to control the transmission of a writing data. The write-blocking signal generating part includes a bus-width signal generating part and a transmission controlling part.
申请公布号 KR20100120575(A) 申请公布日期 2010.11.16
申请号 KR20090039452 申请日期 2009.05.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KOH, MIN JUNG;KO, BOK RIM
分类号 G11C7/00;G11C7/10;G11C7/22 主分类号 G11C7/00
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