发明名称 |
Method for producing a semiconductor substrate |
摘要 |
This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
|
申请公布号 |
US7833877(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20070877456 |
申请日期 |
2007.10.23 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
BOURDELLE KONSTANTIN;MAZURE CARLOS |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|