发明名称 Method for producing a semiconductor substrate
摘要 This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
申请公布号 US7833877(B2) 申请公布日期 2010.11.16
申请号 US20070877456 申请日期 2007.10.23
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 BOURDELLE KONSTANTIN;MAZURE CARLOS
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
主权项
地址