发明名称 |
Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode |
摘要 |
A method of fabricating semiconductor structure is provided in which at least one nFET device and a least one pFET device are formed on a semiconductor substrate. Each device region formed includes a dielectric stack that has a net dielectric constant equal to or greater than silicon dioxide. Gate stacks are provided on each of the dielectric stacks, wherein one of the gate stacks includes a metal gate electrode located atop a surface of a thinned polygate electrode.
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申请公布号 |
US7833849(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20050323564 |
申请日期 |
2005.12.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CALLEGARI ALESSANDRO C.;CHEN TZE-CHIANG;CHUDZIK MICHAEL P.;DORIS BRUCE B.;KIM YOUNG-HEE;NARAYANAN VIJAY;PARUCHURI VAMSI K.;STEEN MICHELLE L.;ZHANG YING |
分类号 |
H01L21/62 |
主分类号 |
H01L21/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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