发明名称 |
Apparatus and method for detecting leakage current of semiconductor memory device, and internal voltage generating circuit using the same |
摘要 |
A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.
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申请公布号 |
US7835198(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20070966779 |
申请日期 |
2007.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI JUN-GI;SHIN YOON-JAE |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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