发明名称 |
Implanted counted dopant ions |
摘要 |
This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallized to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.
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申请公布号 |
US7834422(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20050596720 |
申请日期 |
2005.05.18 |
申请人 |
QUCOR PTY. LTD. |
发明人 |
ANDRESEN SOREN;DZURAK ANDREW STEVEN;GAUJA ERIC;HEARNE SEAN;HOPF TOBY FELIX;JAMIESON DAVID NORMAN;MITIC MLADEN;PRAWER STEVEN;YANG CHANGYI |
分类号 |
H01L29/00;H01L21/265;H01L21/336;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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