发明名称 |
Mixed-scale electronic interface |
摘要 |
Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. A method is provided for fabricating a nanoscale/microscale interface having a microscale layer and a predominantly nanoscale layer.
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申请公布号 |
US7833842(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20090630076 |
申请日期 |
2009.12.03 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
WILLIAMS R. STANLEY;SNIDER GREGORY S.;STEWART DUNCAN |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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