发明名称 Mixed-scale electronic interface
摘要 Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. A method is provided for fabricating a nanoscale/microscale interface having a microscale layer and a predominantly nanoscale layer.
申请公布号 US7833842(B2) 申请公布日期 2010.11.16
申请号 US20090630076 申请日期 2009.12.03
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 WILLIAMS R. STANLEY;SNIDER GREGORY S.;STEWART DUNCAN
分类号 H01L21/82 主分类号 H01L21/82
代理机构 代理人
主权项
地址
您可能感兴趣的专利