发明名称 Charged particle beam lithography system and method for evaluating the same
摘要 In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.
申请公布号 US7834333(B2) 申请公布日期 2010.11.16
申请号 US20070855613 申请日期 2007.09.14
申请人 NUFLARE TECHNOLOGY, INC. 发明人 NISHIMURA RIEKO;TAMAMUSHI SHUICHI
分类号 G21K5/02 主分类号 G21K5/02
代理机构 代理人
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