发明名称 |
SEMICONDUCTOR CONSTRUCTIONS, MEMORY ARRAYS, ELECTRONIC SYSTEMS, AND METHODS OF FORMING SEMICONDUCTOR CONSTRUCTIONS |
摘要 |
The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. Electrically insulative material can fill the upper wide portions while leaving voids within the narrow bottom portions. The bottom portions can have substantially vertical sidewalls, and can join to the upper portions at steps which extend substantially perpendicularly from the sidewalls. The trenched isolation regions can be incorporated into a memory array, and/or can be incorporated into an electronic system. The invention also includes methods of forming semiconductor constructions. |
申请公布号 |
KR20100120316(A) |
申请公布日期 |
2010.11.15 |
申请号 |
KR20107024149 |
申请日期 |
2006.07.10 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;DURCAN D. MARK |
分类号 |
H01L21/76;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|