| 摘要 |
<p>PURPOSE: An exposure mask and a method for forming a semiconductor device using the same are provided to improve a process margin and the contrast of the outermost pattern by solving a problem of contrast deterioration due to the scattering of light passing through a region around an attenuated phase shifting mask. CONSTITUTION: A main region includes a main pattern(100) and a phase inversion pattern(102). A photosensitive film is coated on a semiconductor having a target layer to be etched. The main region is an attenuated phase shift mask. A final pattern is formed by etching the target layer with the photosensitive film as an etch mask.</p> |
