| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device that improves internal quantum efficiency of a light emitting layer using AlGaInN as a crystal material. <P>SOLUTION: A first nitride semiconductor layer as a barrier layer 6b in the light emitting layer 6 is formed of Al<SB>a</SB>Ga<SB>b</SB>In<SB>(1-a-b)</SB>N layers (0<a<1, 0<b<1, 1-a-b>0), into which Si as a first impurity is intentionally added at a concentration A (for example, 5×10<SP>16</SP>cm<SP>-3</SP>) during growth. A second nitride semiconductor layer as a well layer 6a is formed of Al<SB>c</SB>Ga<SB>d</SB>In<SB>(1-c-d)</SB>N layers (0<c<1, 0<d<1, 1-c-d>0), into which Si as a second impurity is intentionally added at a concentration B (0≤B<A) during growth, and in which composition of Al is smaller than the first nitride semiconductor layer. The concentration of oxygen in the case of not being intentionally added in the first nitride semiconductor layer is lower than the concentration of oxygen in the case of not being intentionally added in the second nitride semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
