INTERNAL SEMICONDUCTIVE LAYER, INSULATING TUBE UNIT USING THE SAME, AND MOLDING DIE FOR MOLDING THE INTERNAL SEMICONDUCTIVE LAYER

摘要

PROBLEM TO BE SOLVED: To provide an internal semiconductive layer capable of suppressing the generation of electric breakage and shortening a polishing work time of an uneven portion of its surface without causing a parting line at both end portions as portions having high electric field, to provide a normal temperature shrinkage type insulating tube unit using the internal semiconductive layer, and to provide a molding die for molding the internal semiconductive layer. SOLUTION: The internal semiconductive layer 30 is disposed in a normal temperature shrinkage type insulating tube unit 10 for covering a connection portion between conductors of power cables and is cylindrically made by molding. It also has a parting line 180 which is formed by molding and disposed along a direction crossing an axial direction CL of the internal semiconductive layer 30 in the center portion of the internal semiconductive layer 30. COPYRIGHT: (C)2011,JPO&INPIT