| 摘要 |
780,723. Transistors. LICENTIA PATENTVERWALTUNGS-GES. Aug. 14, 1953 (Aug. 18, 1952; Aug. 18, 1952; Aug. 18, 1952], No. 22435/53. Class 37. In a transistor comprising a semi-conductor body mainly of one conductivity type but having one or more regions of opposite type, and provided with base, emitter and collector electrodes, at least one of the collector or emitter electrodes is a pointed wire the point, of which is located in a narrow cavity in the surface of the body. In the transistor shown in Fig. 1, a cavity 3 and an associated localized region 5 of P-type Ge are formed in N-type Ge body 1 by passing pulses of current through a pointed conductor in contact with the body. A collector electrode 4 of Ni or a noble metal, e.g. Au, or an alloy thereof, is inserted in the cavity and preferably welded or soldered to the wall thereof by a current pulse. The cavity is about 10 microns across and an emitter 7, e.g. of Wo, is placed about 10 Á from the junction 6. In an alternative form there are two collector electrodes of the above type. In this case the emitter may be disposed between them in a cavity. Specification 780,724 is referred to. |
