NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS

摘要

Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region.