| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transistor in which an electric field hardly concentrates in the drain region since the drain voltage of the transistor is determined depending on the driving voltage of a connected element, intensity of the electric field concentrated in the drain region is increased with downsizing of the transistor, and hot carriers are easily generated, and to provide a display device including such a transistor. <P>SOLUTION: End portions of a first wiring layer 115a and a second wiring layer having high electrical conductivity are made not to overlap with a gate electrode layer, whereby concentration of an electric field in the vicinity of a first electrode layer 114a and a second electrode layer 114b is reduced, thus, generation of hot carriers is suppressed. In addition, one of the first and second electrode layers having higher resistivity than the first and second wiring layers are used as drain electrode layers, thereby constituting the transistor 141. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
