SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for surely forming a contact hole reaching a gate wiring and a method of manufacturing the same.

SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a first stress film 38; forming an insulating film 40 having an etching property different from that of the first stress film; etching the insulating film in a second region by using a first mask 60 covering a first region 2 and side-etching the insulating film of a part in the first region, adjacent to the second region; etching the first stress film using the first mask; forming a second stress film having an etching property different from that of the insulating film; etching the second stress film so that a part of the second stress film overlaps with a part of the first stress film and a part of the insulating film by using a second mask covering the second region of which end face at the first region side lies on the insulating film; and forming the contact hole reaching the gate wiring 20 at an interface between the first and second regions.

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