| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, improving a withstand voltage between a drain and a source and reducing an on-resistance. SOLUTION: The method of manufacturing this semiconductor device has the steps of: forming a first trench 3 and a second trench 5 obtained by further deeply etching the first trench 3, in an epitaxial layer 2 formed on a substrate 1; extending a width of the second trench 5; forming an oxide film 7 by oxidizing the extended second trench 5; and filling an electrode material 9 in the first trench 3, and the second trench 5 in which the oxide film 7 is formed. COPYRIGHT: (C)2011,JPO&INPIT |
