发明名称 SYSTEMS AND METHODS FOR FABRICATING HIGH-DENSITY CAPACITORS
摘要 The present invention describes systems and methods for fabricating high-density capacitors. An exemplary embodiment of the present invention provides a method for fabricating a high-density capacitor system including the steps of providing a substrate and depositing a nanoelectrode particulate paste layer onto the substrate. The method for fabricating a high-density capacitor system further includes sintering the nanoelectrode particulate paste layer to form a bottom electrode. Additionally, the method for fabricating a high-density capacitor system includes depositing a dielectric material onto the bottom electrode with an atomic layer deposition process. Furthermore, the method for fabricating a high-density capacitor system includes depositing a conductive material on the dielectric material to form a top electrode.
申请公布号 WO2010129186(A1) 申请公布日期 2010.11.11
申请号 WO2010US32107 申请日期 2010.04.22
申请人 GEORGIA TECH RESEARCH CORPORATION;PULUGURTHA, MARKONDEYARAJ;FENNER, ANDREAS;MALIN, ANNA;GOUD, DASHARATHAM;TUMMALA, RAO;MEDTRONIC, INC. 发明人 PULUGURTHA, MARKONDEYARAJ;FENNER, ANDREAS;MALIN, ANNA;GOUD, DASHARATHAM;TUMMALA, RAO
分类号 H01L29/94;H01L27/06 主分类号 H01L29/94
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