发明名称 |
SEMICONDUCTOR DEVICE HAVING REDUCED DIE-WARPAGE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device and a method of manufacturing the same reduce die-warpage. The semiconductor device includes a substrate and a first layer of material extending substantially over the entire surface of the substrate. A stress-relieving pattern exists in and traverses the first layer so as to partition the first layer into at least two discrete sections. The stress-relieving pattern may be in the form of an interface between the discrete sections of the first layer, or a wall of material different from the material of the first layer. |
申请公布号 |
US2010285654(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20100839573 |
申请日期 |
2010.07.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO HYEOUNG-WON |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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