发明名称 SEMICONDUCTOR DEVICE HAVING REDUCED DIE-WARPAGE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device and a method of manufacturing the same reduce die-warpage. The semiconductor device includes a substrate and a first layer of material extending substantially over the entire surface of the substrate. A stress-relieving pattern exists in and traverses the first layer so as to partition the first layer into at least two discrete sections. The stress-relieving pattern may be in the form of an interface between the discrete sections of the first layer, or a wall of material different from the material of the first layer.
申请公布号 US2010285654(A1) 申请公布日期 2010.11.11
申请号 US20100839573 申请日期 2010.07.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO HYEOUNG-WON
分类号 H01L21/762 主分类号 H01L21/762
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