发明名称 MASK ROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASK ROM DEVICE, AND METHODS OF FABRICATING MASK ROM DEVICE AND SEMICONDUCTOR DEVICE
摘要 A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.
申请公布号 US2010285641(A1) 申请公布日期 2010.11.11
申请号 US20100836066 申请日期 2010.07.14
申请人 发明人 LEE YONG-KYU;HAN JEONG-UK;JEON HEE-SEOG;KIM YOUNG-HO;CHUN MYUNG-JO;MOON JUNG-HO
分类号 H01L21/8238;H01L21/8234 主分类号 H01L21/8238
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