NITRIDE SEMICONDUCTOR STRUCTURE, METHOD OF PRODUCING THE SAME, AND LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a nitride semiconductor element that improves a decrease in light emission efficiency of a nitride semiconductor element, a decrease in reliability of a product due to variance in light emission efficiency among individual light emitting elements, and a decrease in yield of nitride semiconductor element production since a mask pattern using an SiO2layer is easy to be thermally damaged and Si or O2being a component of the thermally damaged mask pattern exerts an adverse influence on a nitride semiconductor film although selective growth technique using the mask pattern made of an SiO2layer is developed for conventional nitride semiconductor film producing technique.

SOLUTION: A nitride semiconductor structure includes a substrate whose growth surface where a nitride semiconductor film is grown comprises a single member, and the nitride semiconductor film 122 formed on the growth surface, convexity/concavity portions 113 being formed at random on the growth surface of the substrate.

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