发明名称 |
DISCONTINUOUS THIN SEMICONDUCTOR WAFER SURFACE FEATURES |
摘要 |
A semiconductor wafer has a semiconductor substrate and films on the substrate. The substrate and/or the films have at least one etch line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etch lines to prevent shorting of the layers. |
申请公布号 |
WO2010129908(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
WO2010US34102 |
申请日期 |
2010.05.07 |
申请人 |
QUALCOMM INCORPORATED;CHANDRASEKARAN, ARVIND |
发明人 |
CHANDRASEKARAN, ARVIND |
分类号 |
H01L21/302;H01L21/304;H01L21/98;H01L23/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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