| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for forming a photoelectric conversion layer in arbitrary pattern, with respect to a method and an apparatus for manufacturing a photoelectric conversion device having the photoelectric conversion layer, provided on a base. <P>SOLUTION: A coil 23 applied with high-frequency electric power and the base 10 having a silicon film formed as the photoelectric conversion layer are arranged opposite each other, and a mask 24 having an opening 241 provided corresponding to the pattern of the photoelectric conversion layer is arranged therebetween. In a state where a high-frequency magnetic field is produced by the coil 23, a material gas consisting principally of a silane gas is sent into a space SP over the base 10 and mask 24 to be changed into plasma, thereby depositing a silicon thin film in a predetermined pattern on the base 10 through the mask 24. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
