发明名称 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory apparatus that transfers data at a high speed. <P>SOLUTION: The nonvolatile semiconductor memory apparatus includes: memory cell strings 11; a first buffer 3 connected to a first bit line; a second buffer 4 connected to a second bit line; and a data transfer controller 7 provided with a first latch and a second latch for controlling timing, by a first, second and third signals, to output first and second data (D1, D2) which can be held by the first and second buffers 3, 4, respectively to an external terminal 11. The data transfer controller 7 transfers the first data D1 and the second data D2 to the first latch in synchronization with the first signal, and after the first data D1 is transferred to the outside through the second latch in synchronization with the second signal, transfers the second data D2 to the outside through the second latch in synchronization with the third signal. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010257540(A) 申请公布日期 2010.11.11
申请号 JP20090107929 申请日期 2009.04.27
申请人 TOSHIBA CORP 发明人 TAKEUCHI YOSHIAKI
分类号 G11C16/06;G11C16/02;G11C16/04 主分类号 G11C16/06
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