SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor of stable electric characteristics which uses an oxide semiconductor layer by reducing contact resistance between the oxide semiconductor layer and a source electrode layer or drain electrode layer.

SOLUTION: In the thin film transistor that uses the oxide semiconductor layer, a buffer layer having a high resistance region and a low resistance region on the oxide semiconductor layer is formed, and the oxide semiconductor layer and the source electrode layer or drain electrode layer contact each other through the low resistance region of the buffer layer.

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