发明名称 |
FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE |
摘要 |
In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
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申请公布号 |
US2010283133(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20100842400 |
申请日期 |
2010.07.23 |
申请人 |
HAMADA YOSHITAKA;YAGIHASHI FUJIO;ASANO TAKESHI;NAKAGAWA HIDEO;SASAGO MASARU |
发明人 |
HAMADA YOSHITAKA;YAGIHASHI FUJIO;ASANO TAKESHI;NAKAGAWA HIDEO;SASAGO MASARU |
分类号 |
H01L29/00;C09D5/25;H01L21/31 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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地址 |
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