METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal substrate having uniform volume electric resistivity in the range of the whole area part. SOLUTION: By producing an ingot having a large area of ä0001} facet surface which appears on a silicon carbide single crystal ingot growth surface and cutting-polishing the ingot, the whole area region of a substrate is made to be composed of ingot parts corresponding to the ä0001} facet region during growth. COPYRIGHT: (C)2011,JPO&INPIT