发明名称 |
TANTALUM ALUMINUM OXYNITRIDE HIGH-K DIELECTRIC |
摘要 |
Electronic apparatus and methods of forming the electronic apparatus may include a tantalum aluminum oxynitride film for use in a variety of electronic systems and devices. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film. |
申请公布号 |
US2010283537(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20100838983 |
申请日期 |
2010.07.19 |
申请人 |
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发明人 |
FORBES LEONARD;AHN KIE Y.;BHATTACHARYYA ARUP |
分类号 |
H03H11/24;H01L21/02;H01L21/302;H01L29/92 |
主分类号 |
H03H11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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