| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single-side wafer polishing technique achieving a high flatness wafer, even though the wafer has a diameter of 300 mm or more, by preventing edge rounding at the circumferential edge of the wafer. <P>SOLUTION: A method of single-sided polishing one side of the wafer controls the amount of polishing a predetermined edge portion of the wafer by individually controlling pressures for pressing the other side of the wafer against a rotary table surface with an abrasive cloth, namely a first pressure applied to a part of or the entire surface of a predetermined annular region on the other surface of the wafer which lies somewhat closer to the center of the wafer than the edge of the wafer; and a second pressure applied to the remaining region on the other surface of the wafer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
