发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A semiconductor device includes: an insulating substrate; a stepwise layer arranged on the insulating substrate and having an end portion whose inclination angle is equal to or greater than 60°; an insulating layer formed on the insulating substrate and the stepwise layer so as to be elevated on the stepwise layer; a first semiconductor layer arranged at a portion adjacent to the elevated insulating layer; and a second semiconductor layer structured with a material identical to that of the first semiconductor layer, and formed in an island shape on the elevated insulating layer.
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申请公布号 |
US2010283059(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
US20080811842 |
申请日期 |
2008.12.25 |
申请人 |
NAKAZAWA MAKOTO;KIMURA TOMOHIRO |
发明人 |
NAKAZAWA MAKOTO;KIMURA TOMOHIRO |
分类号 |
H01L29/786;H01L21/336;H01L21/84;H01L23/552 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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