发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 A semiconductor device includes: an insulating substrate; a stepwise layer arranged on the insulating substrate and having an end portion whose inclination angle is equal to or greater than 60°; an insulating layer formed on the insulating substrate and the stepwise layer so as to be elevated on the stepwise layer; a first semiconductor layer arranged at a portion adjacent to the elevated insulating layer; and a second semiconductor layer structured with a material identical to that of the first semiconductor layer, and formed in an island shape on the elevated insulating layer.
申请公布号 US2010283059(A1) 申请公布日期 2010.11.11
申请号 US20080811842 申请日期 2008.12.25
申请人 NAKAZAWA MAKOTO;KIMURA TOMOHIRO 发明人 NAKAZAWA MAKOTO;KIMURA TOMOHIRO
分类号 H01L29/786;H01L21/336;H01L21/84;H01L23/552 主分类号 H01L29/786
代理机构 代理人
主权项
地址