| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that suppresses peeling of an insulating protective film near a columnar structure. SOLUTION: The surface-emitting semiconductor laser 10 includes a substrate 12, an n-type lower DBR 16 including a buffer layer 14, an active layer 20, a p-type upper DBR 22, a post P formed by etching a semiconductor layer from the upper DBR 22 to the lower DBR 16, a contact groove 32 reaching the buffer layer 14 through an opening 26B of the insulating protective film 26 at a bottom of the post P, an n-side electrode 34 electrically connected to the buffer layer 14, a p-side electrode 28 electrically connected to the upper DBR 22 through an opening 26A of the insulating protective film 26 at a top of the post P, and a peeling prevention groove 50 formed in the lower DBR 16 between the contact groove 32 and post P and preventing the insulating protective film from being peeled. COPYRIGHT: (C)2011,JPO&INPIT |
