CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, AND CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing aqueous dispersion and a chemical mechanical polishing method for rapidly and flatly polishing a semiconductor wafer containing tungsten.

SOLUTION: This chemical mechanical polishing aqueous dispersion for polishing a workpiece provided with a wiring layer containing tungsten contains: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10-60 nm.

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