| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of improving a performance for controlling the film thickness of a substrate. <P>SOLUTION: In a film formation reactive apparatus, a plurality of partial control zones (an LL zone, an LR zone, and an R zone) capable of controlling a gas flow rate independently in the width direction of a gas flow are configured on an upstream side of a gas inlet port 20B, and a control device 66 for controlling the gas flow rate for respective partial control zones is provided. The control device 66 obtains a deviation between a film growth rate and a predetermined target film growth rate at a variety of locations on a wafer 28 based on the data of a thickness of a film having been formed on the wafer 28 by a rotating film formation carried out while rotating the wafer 28, and controls the respective gas flow rates of the partial control zones by using rotation film growth sensitivity data 72 defining a sensitivity to a change in a film growth rate distribution during the rotating film formation on the wafer 28 so that the deviation at a variety of locations is reduced by a change in the respective gas flow rates of the partial control zones. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
