| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be prevented from decreasing in gate breakdown voltage by taking countermeasure eliminating occurrence of thinning of a gate oxide film does. <P>SOLUTION: A first trench 3 snaking in a closed loop, a second trench 25 in a shape of a closed loop enclosing the first trench 3, a third trench 71 connecting the first trench 3 and second trench 25 to each other, and a fourth trench 72 connecting a curved part of the first trench 3 and a linear part opposed thereto to each other are respectively formed, wherein a first gate polysilicon interconnect 19 is formed at the third trench 71 and a second gate polysilicon interconnect 20 is formed at the fourth trench 72. Neither of the third and fourth trenches 71 and 72, in which the first and second gate polysilicon interconnects 19 and 20 are formed, has a trench termination part, and therefore a gate insulating film 10 below the first and second gate polysilicon interconnects 19 and 20 does not become thin, so that the semiconductor device can be prevented from decreasing in gate breakdown voltage. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
