| 发明名称 |
CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, AND CHEMICAL MECHANICAL POLISHING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing aqueous dispersion and a chemical mechanical polishing method for rapidly and flatly polishing a semiconductor wafer containing tungsten. <P>SOLUTION: The chemical mechanical polishing aqueous dispersion for polishing a workpiece provided with a wiring layer containing tungsten contains: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica. The content (M<SB>A</SB>) [mass%] of the (A) component and the content (M<SB>C</SB>) [mass%] of the (C) component have the relationship M<SB>A</SB>/M<SB>C</SB>=0.0001-0.003, and pH is 1-3. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2010258416(A) |
申请公布日期 |
2010.11.11 |
| 申请号 |
JP20100038431 |
申请日期 |
2010.02.24 |
| 申请人 |
JSR CORP |
发明人 |
SHIDA HIROTAKA;TAKEMURA AKIHIRO;ABE TAICHI |
| 分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
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