| 摘要 |
PROBLEM TO BE SOLVED: To provide a long-life nitride semiconductor laser element which achieves good light confinement even when driven for a long time, secures adhesiveness of protective films on both sides of a ridge, prevents fluctuation of outputs of the nitride semiconductor laser element. SOLUTION: The nitride semiconductor laser element includes a substrate, a nitride semiconductor layer formed on the substrate and has the ridge on its surface, and an insulating protective film formed on a surface of the nitride semiconductor layer. The insulating protective film includes a first film formed in contact with a side surface of the ridge and the surface of the nitride semiconductor layer, and a second film formed on the first film. A void is formed between the first film and second film. COPYRIGHT: (C)2011,JPO&INPIT |
