| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an imaging device capable of suppressing crosstalk and degradation of sensitivity, in an imaging device where charge is increased by collisional ionization. <P>SOLUTION: This CMOS image sensor 100 (imaging device) includes: an n-type embedded layer 14 formed on a surface of a p-type silicon substrate 11 and constituting an electron transferring channel; an electron multiplication part 14a formed in the embedded layer 14 for multiplying electrons by being subjected to collisional ionization; a multiplication gate electrode 21 formed on a front surface side of the silicon substrate 11 for applying a voltage to the electron multiplication part 14a; and an N-type PD part 13 superposed and arranged to face the embedded layer 14a through a p-type region 11a, and capable of being supplied with electrons. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
