METHOD OF GENERATING COMPLEMENTARY MASKS, COMPUTER PROGRAM PRODUCT, DEVICE MANUFACTURING METHOD, AND METHOD OF IMAGING ON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process.

SOLUTION: The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a prescribed critical width; identifying vertical critical features in the V-mask having a width which is less than a prescribed critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask.

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