| 摘要 |
PROBLEM TO BE SOLVED: To provide a high on-off ratio transistor in a bottom gate type thin film transistor. SOLUTION: In the bottom gate type thin film transistor in which at least a gate electrode 102 and a gate insulating layer 103 are sequentially laminated on an insulating substrate 101 and an oxide containing semiconductor layer 104, a source electrode 105 and a drain electrode 106 are formed on the gate insulating layer, the thin film transistor is characterized in that the oxygen density on a gate side surface of the semiconductor layer is lower than that on the opposite surface. Thus, the semiconductor layer 104 is irradiated with an oxygen containing plasma. COPYRIGHT: (C)2011,JPO&INPIT |
