| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of easily forming a TiO<SB>2</SB>film of a rutile crystal structure at relatively low temperature as a capacitive insulating film for a capacitor. SOLUTION: A silicon oxide film 2 is formed on a semiconductor substrate 1; a Ti film 3 is formed by executing sputtering of a Ti target by using a sputtering method in a state where the temperature of the substrate is kept at 300°C and the inside of a chamber is kept at a pressure of 0.5 Pa in an Ar atmosphere; and the Ti film 3 is subjected to anneal oxidation by furnace anneal using a heat treatment furnace for supplying oxygen gas to form a TiO<SB>2</SB>film 4 having a rutile crystal structure. COPYRIGHT: (C)2011,JPO&INPIT |
