METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of large area at a low cost, which takes a crystal face which is the most suitable for an n-channel type transistor and a p-channel type transistor, as a channel formation region, for improved performance. SOLUTION: An island-like single crystal semiconductor layer whose upper surface is within±10°from surface (211) is formed on an insulating surface. A non single crystal semiconductor layer is formed on the insulating surface to adjoin the upper surface and side surface of the single crystal semiconductor layer. The non single crystal semiconductor layer is irradiated with laser beam to melt the non single crystal semiconductor layer. The non single crystal semiconductor layer formed on the insulating surface with the single crystal semiconductor layer as a seed crystal is crystallized to form a crystalline semiconductor layer. Using the crystalline semiconductor layer, an n-channel type transistor and p-channel type transistor are formed. COPYRIGHT: (C)2011,JPO&INPIT