ZIRCONIUM PRECURSOR USEFUL IN ATOMIC LAYER DEPOSITION OF ZIRCONIUM-CONTAINING FILM

摘要

PROBLEM TO BE SOLVED: To provide zirconium precursors useful in atomic layer deposition of zirconium-containing films. SOLUTION: Zirconium precursors are represented by formulae I and II. Such precursors are liquids at room temperature, and can be employed in vapor deposition processes such as ALD to form zirconium-containing films, e.g., high k dielectric films on microelectronic device substrates. The zirconium precursors can be stabilized in such vapor deposition processes by thermal stabilization amine additives. COPYRIGHT: (C)2011,JPO&INPIT